2N222 Transistor

Descriptions

The 2N222 transistor is a small signal NPN bipolar junction transistor that is commonly used in electronic circuits due to its low cost, availability, and ease of use. Here are some of its technical specifications:

1. Maximum Collector-Emitter Voltage (Vce): 30V

2. Maximum Collector-Base Voltage (Vcb): 60V

3. Maximum Emitter-Base Voltage (Veb): 5V

4. Maximum Collector Current (Ic): 600mA

5. Power Dissipation (Pd): 625mW

6. DC Current Gain (hfe): 100-300

7. Transition Frequency (ft): 300MHz

8. Input Capacitance (Cib): 6pF

9. Output Capacitance (Cob): 2.5pF

10. Reverse Transfer Capacitance (Crb): 1.3pF

Note that these values may vary depending on the specific manufacturer and batch of the transistor. It is always recommended to refer to the datasheet for the specific transistor you are using for accurate technical specifications.

Specification

Maximum Collector-Emitter Voltage (Vce): 30V

Maximum Collector-Base Voltage (Vcb): 60V

Maximum Emitter-Base Voltage (Veb): 5V

Maximum Collector Current (Ic): 600mA

Power Dissipation (Pd): 625mW

DC Current Gain (hfe): 100-300

Transition Frequency (ft): 300MHz

Input Capacitance (Cib): 6pF

Output Capacitance (Cob): 2.5pF

Reverse Transfer Capacitance (Crb): 1.3pF